半导体学报2020年第5期目次

Special Issue on Perovskite Semiconductor Optoelectronic Materials and Devices

J. Semicond. Volume 41, Number 5, May 2020

NEWS AND VIEWS

Perspective on the imaging device based on perovskite materials

Zhou Yang, Shengzhong Liu

J. Semicond.  2020, 41(5): 050401

doi: 10.1088/1674-4926/41/5/050401

EDITORIAL

Preface to the Special Issue on Perovskite Semiconductor Optoelectronic Materials and Devices

Jingbi You, Jiang Tang, Haibo Zeng, Jianpu Wang

J. Semicond.  2020, 41(5): 050101

doi: 10.1088/1674-4926/41/5/050101

REVIEWS

Recent progress in developing efficient monolithic all-perovskite tandem solar cells

Yurui Wang, Mei Zhang, Ke Xiao, Renxing Lin, Xin Luo, Qiaolei Han, Hairen Tan

J. Semicond.  2020, 41(5): 051201

doi: 10.1088/1674-4926/41/5/051201

HI hydrolysis-derived intermediate as booster for CsPbI₃ perovskite: from crystal structure, film fabrication to device performance

Zhizai Li, Zhiwen Jin

J. Semicond.  2020, 41(5): 051202

doi: 10.1088/1674-4926/41/5/051202

The strategies for preparing blue perovskite light-emitting diodes

Jianxun Lu, Zhanhua Wei

J. Semicond.  2020, 41(5): 051203

doi: 10.1088/1674-4926/41/5/051203

Perovskite semiconductors for direct X-ray detection and imaging

Yirong Su, Wenbo Ma, Yang (Michael) Yang

J. Semicond.  2020, 41(5): 051204

doi: 10.1088/1674-4926/41/5/051204

The application of halide perovskites in memristors

Gang Cao, Chuantong Cheng, Hengjie Zhang, Huan Zhang, Run Chen, Beiju Huang, Xiaobing Yan, Weihua Pei, Hongda Chen

J. Semicond.  2020, 41(5): 051205

doi: 10.1088/1674-4926/41/5/051205

ARTICLES

Comprehensive first-principles studies on phase stability of copper-based halide perovskite derivatives A_lCu_mX_n (A = Rb and Cs; X = Cl, Br, and I)

Zhongti Sun, Xiwen Chen, Wanjian Yin

J. Semicond.  2020, 41(5): 052201

doi: 10.1088/1674-4926/41/5/052201

I/P interface modification for stable and efficient perovskite solar cells

Jie Zhang, Shixin Hou, Renjie Li, Bingbing Chen, Fuhua Hou, Xinghua Cui, Jingjing Liu, Qi Wang, Pengyang Wang, Dekun Zhang, Ying Zhao, Xiaodan Zhang

J. Semicond.  2020, 41(5): 052202

doi: 10.1088/1674-4926/41/5/052202

Mo⁵⁺ doping induced interface polarization for improving performance of planar perovskite solar cells

Yurong Jiang, Yue Yang, Yiting Liu, Shan Yan, Yanxing Feng, Congxin Xia

J. Semicond.  2020, 41(5): 052203

doi: 10.1088/1674-4926/41/5/052203

Light-emitting diodes based on all-inorganic copper halide perovskite with self-trapped excitons

Nian Liu, Xue Zhao, Mengling Xia, Guangda Niu, Qingxun Guo, Liang Gao, Jiang Tang

J. Semicond.  2020, 41(5): 052204

doi: 10.1088/1674-4926/41/5/052204

Giant efficiency and color purity enhancement in multicolor inorganic perovskite light-emitting diodes via heating-assisted vacuum deposition

Boning Han, Qingsong Shan, Fengjuan Zhang, Jizhong Song, Haibo Zeng

J. Semicond.  2020, 41(5): 052205

doi: 10.1088/1674-4926/41/5/052205

Two-dimensional transition metal dichalcogenides for lead halide perovskites-based photodetectors: band alignment investigation for the case of CsPbBr₃/MoSe₂

Le Huang, Nengjie Huo, Zhaoqiang Zheng, Huafeng Dong, Jingbo Li

J. Semicond.  2020, 41(5): 052206

doi: 10.1088/1674-4926/41/5/052206

《半导体学报》简介：

《半导体学报》是中国科学院主管、中国电子学会和中国科学院半导体研究所主办的学术刊物，1980年创刊，首任主编是王守武院士，黄昆先生撰写了创刊号首篇论文，2009年改为全英文月刊Journal of Semiconductors（简称JOS），同年开始与IOPP英国物理学会出版社合作向全球发行。现任主编是中科院副院长、国科大校长李树深院士。

2016年，JOS被ESCI收录。

2019年，JOS入选“中国科技期刊卓越行动计划”。

“中国半导体十大研究进展”推荐与评选工作简介：

《半导体学报》在创刊四十年之际，启动实施 “中国半导体年度十大研究进展”的推荐和评选工作，记录我国半导体科学与技术研究领域的标志性成果。以我国科研院所、高校和企业等机构为第一署名单位，本年度公开发表的半导体领域研究成果均可参与评选。请推荐人或自荐人将研究成果的PDF文件发送至《半导体学报》电子邮箱：[e-mail]，并附简要推荐理由。被推荐人须提供500字左右工作简介，阐述研究成果的学术价值和应用前景。年度十大研究进展将由评审专家委员会从候选推荐成果中投票产生，并于下一年度春节前公布。

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